300~380 T abs <1% , T=50%@405nm +- 10nm
yjAL\U7`T 425~680 Tave >90% , T=50%@720nm +-10nm
=Uh$&m 780~1200 nm T ave <1%
m2o0y++TjW hQi2U 用 (0.5H L 0.5H)^s (0.5L H 0.5L)^s (0.5L H 0.5L)^s 3個(gè)膜堆(2短1長(zhǎng) )
$?Wb}DU7_L <qSC#[xu H: Ta2O5 L:SiO2
rKn~qVls